A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
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A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Read Less
Add this copy of Insulated Gate Bipolar Transistor Igbt Theory and to cart. $106.14, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Santa Clarita, CA, UNITED STATES, published 2003 by Wiley-IEEE Press.
Add this copy of Insulated Gate Bipolar Transistor Igbt Theory and to cart. $143.08, good condition, Sold by BGV Books LLC rated 4.0 out of 5 stars, ships from Murray, KY, UNITED STATES, published 2003 by Wiley-IEEE Press.
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Add this copy of Insulated Gate Bipolar Transistor Igbt Theory and to cart. $189.77, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2003 by Wiley-IEEE Press.
Add this copy of Insulated Gate Bipolar Transistor Igbt Theory and to cart. $201.67, like new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2003 by Wiley-IEEE Press.
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Fine. Sewn binding. Cloth over boards. 648 p. Contains: Unspecified. IEEE Press Series on Microelectronic Systems. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.