The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
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The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
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Add this copy of MOS Interface Physics, Process and Characterization to cart. $60.11, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2024 by CRC Press.
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New. Print on demand Trade paperback (US). Glued binding. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white.
Add this copy of MOS Interface Physics, Process and Characterization to cart. $77.84, new condition, Sold by Booksplease rated 4.0 out of 5 stars, ships from Southport, MERSEYSIDE, UNITED KINGDOM, published 2024 by CRC Press.
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New. Trade paperback (US). Glued binding. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white.
Add this copy of MOS Interface Physics, Process and Characterization to cart. $82.68, new condition, Sold by Ria Christie Books rated 4.0 out of 5 stars, ships from Uxbridge, MIDDLESEX, UNITED KINGDOM, published 2024 by CRC Press.
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New. Trade paperback (US). Glued binding. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white.
Add this copy of MOS Interface Physics, Process and Characterization to cart. $112.73, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2021 by CRC Press.
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New. Print on demand Sewn binding. Cloth over boards. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white.
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New. Sewn binding. Cloth over boards. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of MOS Interface Physics, Process and Characterization to cart. $139.01, new condition, Sold by Booksplease rated 4.0 out of 5 stars, ships from Southport, MERSEYSIDE, UNITED KINGDOM, published 2021 by CRC Press.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Sewn binding. Cloth over boards. 162 p. Contains: Unspecified, Illustrations, black & white, Halftones, black & white, Line drawings, black & white, Tables, black & white.
