Investigation of the optical and electrical behavior of some semiconductors at very high temperatures has not been an area of much study, at least not experimentally. The importance of such research becomes obvious due to the effects of high temperatures on semiconductor devices such as infrared detectors and light emitters. Besides the destructive effects of thermal stress and melting, changes in the optical properties of the material can greatly affect device performance. In this research, the infrared absorption of Si, ...
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Investigation of the optical and electrical behavior of some semiconductors at very high temperatures has not been an area of much study, at least not experimentally. The importance of such research becomes obvious due to the effects of high temperatures on semiconductor devices such as infrared detectors and light emitters. Besides the destructive effects of thermal stress and melting, changes in the optical properties of the material can greatly affect device performance. In this research, the infrared absorption of Si, Ge, GaAs, GaSb, InAs, and InP was measured from 0.6 to 25 1/4m at temperatures ranging from 295 up to 900 K, using a Fourier Transform InfraRed (FTIR) spectrometer in combination with a custom-designed heater assembly. The band gap shift was estimated from the experimental results and compared to existing data. There was good agreement between the two results. For GaSb and InAs, data was taken at higher temperatures than what was found in the literature. That data provides an extension of existing theory to a higher temperature range. Free-carrier absorption was also observed and was compared to existing data. Temperature dependent expressions were developed for the band gap energy and free-carrier absorption in Si, Ge, GaAs, GaSb, InAs, and InP. This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
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